Japanese start-up Power Diamond Systems has advanced its proprietary diamond MOSFET technology and, for the first time in the world for a diamond-based device, achieved a breakdown voltage of 550 V ...
onsemi’s 1700-V EliteSiC MOSFETs and EliteSiC Schottky diodes provide reliable, efficient operation for energy infrastructure and industrial drive applications. The 1700-V NTH4L028N170M1 MOSFET brings ...
Gas insulation plays a central role in the design and operation of high voltage equipment by utilising dielectric gases to prevent undesired electrical discharges and ensure reliable performance.
A technical paper titled “Diamond p-Type Lateral Schottky Barrier Diodes With High Breakdown Voltage (4612 V at 0.01 mA/Mm)” was published by researchers at University of Illinois at Urbana–Champaign.
The JEDEC 35 Standard (EIA/JESD35, Procedure for Wafer-Level Testing of Thin Dielectrics) describes voltage ramp (V-ramp) and current ramp (J-ramp) tests to monitor oxide integrity. These tests are ...
Central Semiconductor, manufacturer of discrete semiconductors, recently released the CMXSTB Series surface-mount stabistors packaged in the SOT-26 case. This new series consists of the 1.2-V ...
AZoM on MSN
Why Board-Level Insulators and Dielectric Materials are Critical for Safe, High-Voltage PCB Design
Mastering board-level insulation principles like clearance, creepage, and dielectric strength is key to preventing arcing and ensuring long-term dependability.
Some results have been hidden because they may be inaccessible to you
Show inaccessible results