MUNICH, Germany--(BUSINESS WIRE)--Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN ...
A new gate driver claims to ease the adoption of gallium nitride (GaN) technology in consumer and industrial applications such as power supplies in computer servers, factory-automation equipment, ...
Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die
Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne ...
The lateral structure is currently the most widely used of the various GaN transistor structures. High-electron–mobility transistors (HEMTs) made of gallium nitride are lateral devices that use a ...
A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
Benchmarking the output power (P out) as a function of frequency for GaN-on-silicon. To the best of the authors’ knowledge, ...
This year, several companies are expected to bring 600/650 V Gallium Nitride (GaN) power transistors to market. Almost all will be normally-on (depletion mode) transistors connected in a cascode ...
DUBLIN--(BUSINESS WIRE)--The "Infineon 600V CoolGaN Transistor Family" report has been added to ResearchAndMarkets.com's offering. The first GaN-on-Si HEMT transistor from the world leader in power ...
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