A new 600V GaAs Power Schottky diode is compared with Si and SiC diodes in a 200W CCM-PFC system. With both, GaAs and SiC, the PFC system losses were reduced up to 25%. Higher on-state losses of GaAs ...

Combining efficiency with ruggedness, RIR Power Electronics’ MPS technology enables designers to achieve higher performance without compromising reliability.

High-power semiconductor laser diodes represent a critical technology underpinning modern industrial, medical, and telecommunications applications. These devices convert electrical energy into ...

In the field of power electronics, the compound semiconductors gallium nitride and silicon carbide are dominating the market. Due to its beneficial properties, gallium arsenide is gaining more and ...

MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel today announced two new additions to its family of high power limiters, the TDLM052402, a quasi-active, 2 kW, L/S/C-band SMT PIN Diode Limiter and ...

America Semiconductor, LLC announced the release of its SD51 silicon power Schottky diodes. The DO-5 stud-mount parts feature a continuous forward current of 60 A, and repetitive peak reverse voltage ...

The semiconductor industry has a well-established history of “smaller, faster, and cheaper.” Improving performance and reducing device cost while shrinking packaging size is fundamental to virtually ...

As a rule, PowerBites stories tend to focus on new products and technologies and leave business-related news to other outlets. However, we've made an exception in the case of Infineon's recently ...

RIR Power Electronics today announced the launch of its Silicon Carbide Merged-PiN Schottky diodes, marking a significant advancement in power device technology for next-generation electric vehicles, ...